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Integrated Circuits (ICs)(10403)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MT29F2G08ABAGAH4-AIT:G | 2.5267 |  |
2047 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Bulk | Active | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | MT29F2G08 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 63-VFBGA (9x11) | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29F2G08ABAGAH4-AIT:G | 1,260 | Non-Volatile | 2Gbit | FLASH | 256M x 8 | Parallel | - | |||||
 |
MT53E4D1BSQ-DC | 22.5000 | |
9011 | 0.00000000 | Micron Technology Inc. | - | Bulk | Active | MT53E4 | - | REACH Unaffected | 557-MT53E4D1BSQ-DC | 1,360 | |||||||||||||||||||
 |
MT29F2T08GELBEJ4:B | - | |
1328 | 0.00000000 | Micron Technology Inc. | - | Bulk | Obsolete | 0°C ~ 70°C (TA) | Surface Mount | 132-VBGA | MT29F2T08 | FLASH - NAND (TLC) | 2.7V ~ 3.6V | 132-VBGA (12x18) | - | 557-MT29F2T08GELBEJ4:B | OBSOLETE | 1,120 | Non-Volatile | 2Tbit | FLASH | 256G x 8 | Parallel | - | |||||||
|
MTFC16GAPALGT-AIT | - | |
3887 | 0.00000000 | Micron Technology Inc. | - | Bulk | Last Time Buy | -40°C ~ 85°C (TA) | MTFC16 | FLASH - NAND | - | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MTFC16GAPALGT-AIT | 3A991B1A | 8542.32.0071 | 1,520 | Non-Volatile | 128Gbit | FLASH | 16G x 8 | MMC | - | ||||||
|
MTFC128GAPALBH-AIT | - | |
5037 | 0.00000000 | Micron Technology Inc. | - | Bulk | Last Time Buy | -40°C ~ 85°C (TA) | MTFC128 | FLASH - NAND | - | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MTFC128GAPALBH-AIT | 3A991B1A | 8542.32.0071 | 1,520 | Non-Volatile | 1Tbit | FLASH | 128G x 8 | MMC | - | ||||||
|
MTFC32GAPALHT-AAT | - | |
5316 | 0.00000000 | Micron Technology Inc. | - | Bulk | Last Time Buy | -40°C ~ 105°C (TA) | MTFC32G | FLASH - NAND | - | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MTFC32GAPALHT-AAT | 8542.32.0071 | 980 | Non-Volatile | 256Gbit | FLASH | 32G x 8 | MMC | - | |||||||
|
MT53E2D1ACY-DC | 22.5000 | |
5695 | 0.00000000 | Micron Technology Inc. | - | Bulk | Active | MT53E2 | - | REACH Unaffected | 557-MT53E2D1ACY-DC | 1,360 | |||||||||||||||||||
|
MT29F2G08ABAGAH4-AIT:G TR | 2.4998 | |
7622 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | MT29F2G08 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 63-VFBGA (9x11) | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29F2G08ABAGAH4-AIT:GTR | 2,000 | Non-Volatile | 2Gbit | FLASH | 256M x 8 | Parallel | - | |||||
 |
MT40A4G4DVN-062H:E | - | |
9411 | 0.00000000 | Micron Technology Inc. | - | Tray | Obsolete | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | MT40A4G4 | SDRAM - DDR4 | 1.14V ~ 1.26V | 78-FBGA (7.5x11) | download | 557-MT40A4G4DVN-062H:E | OBSOLETE | 8542.32.0071 | 210 | 1.6 GHz | Volatile | 16Gbit | 27 ns | DRAM | 4G x 4 | Parallel | - | ||||
|
MT40A8G4CLU-075H:E | - | |
9601 | 0.00000000 | Micron Technology Inc. | - | Tray | Obsolete | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | MT40A8G4 | SDRAM - DDR4 | 1.14V ~ 1.26V | 78-FBGA (7.5x11) | - | 557-MT40A8G4CLU-075H:E | OBSOLETE | 8542.32.0071 | 210 | 1.33 GHz | Non-Volatile | 32Gbit | 27 ns | DRAM | 8G x 4 | Parallel | - | ||||
|
MT53E2DBDS-DC | 22.5000 | |
1693 | 0.00000000 | Micron Technology Inc. | - | Bulk | Active | MT53E2 | - | REACH Unaffected | 557-MT53E2DBDS-DC | 1,360 | |||||||||||||||||||
|
MT53E2D1ACY-DC TR | 22.5000 | |
5787 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Active | MT53E2 | - | REACH Unaffected | 557-MT53E2D1ACY-DCTR | 2,000 | |||||||||||||||||||
|
MT53E2DBDS-DC TR | 22.5000 | |
9307 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Active | MT53E2 | - | REACH Unaffected | 557-MT53E2DBDS-DCTR | 2,000 | |||||||||||||||||||
|
MT29F4G16ABBFAH4-AAT:F | 3.8912 | |
3346 | 0.00000000 | Micron Technology Inc. | - | Bulk | Active | -40°C ~ 105°C (TA) | Surface Mount | 63-VFBGA | MT29F4G16 | FLASH - NAND (SLC) | 1.7V ~ 1.95V | 63-VFBGA (9x11) | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29F4G16ABBFAH4-AAT:F | 8542.32.0071 | 1,260 | Non-Volatile | 4Gbit | FLASH | 256M x 16 | Parallel | - | ||||
 |
MT55L256L32FT-12IT | 17.3600 | |
1 | 0.00000000 | Micron Technology Inc. | ZBT® | Bulk | Active | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | SRAM - ZBT | 3.135V ~ 3.465V | 100-TQFP (14x20.1) | download | Not applicable | 3 (168 Hours) | REACH Unaffected | 3A991B2A | 8542.32.0041 | 1 | 83 MHz | Volatile | 8Mbit | 9 ns | SRAM | 256K x 32 | Parallel | - | |||
|
MT29F2G08ABBGAM79A3WC1L | 2.6600 | |
6064 | 0.00000000 | Micron Technology Inc. | - | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | Die | MT29F2G08 | FLASH - NAND | 1.7V ~ 1.95V | Die | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29F2G08ABBGAM79A3WC1L | 1 | Non-Volatile | 2Gbit | FLASH | 256M x 8 | Parallel | - | |||||
|
MT58L256L18P1T-7.5C | 4.8200 | |
3 | 0.00000000 | Micron Technology Inc. | SYNCBURST™ | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | SRAM - Standard | 3.135V ~ 3.6V | 100-TQFP (14x20.1) | download | Not applicable | 3 (168 Hours) | Vendor Undefined | 3A991B2A | 8542.32.0041 | 1 | 133 MHz | Volatile | 4Mbit | 4 ns | SRAM | 256K x 18 | Parallel | - | |||
|
MT58L256V36PS-6TR | 5.9800 | |
32 | 0.00000000 | Micron Technology Inc. | SYNCBURST™ | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | SRAM - Standard | 3.135V ~ 3.6V | 100-TQFP (14x20.1) | download | Not applicable | 3 (168 Hours) | REACH Unaffected | 3A991B2A | 8542.32.0041 | 100 | 166 MHz | Volatile | 8Mbit | 3.5 ns | SRAM | 256K x 36 | Parallel | - | |||
|
MT25QL128ABA1EW7-0M02IT | - | |
2178 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Tube | Obsolete | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | MT25QL128 | FLASH - NOR | 2.7V ~ 3.6V | 8-WPDFN (6x5)(MLP8) | - | ROHS3 Compliant | 3 (168 Hours) | 557-MT25QL128ABA1EW7-0M02IT | OBSOLETE | 2,940 | 133 MHz | Non-Volatile | 128Mbit | FLASH | 16M x 8 | SPI | 1.8ms | ||||
 |
MT54W1MH18BF-5TR | 43.4700 | |
2 | 0.00000000 | Micron Technology Inc. | QDR™ | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | SRAM - Synchronous | 1.7V ~ 1.9V | 165-FBGA (13x15) | download | Not applicable | 3 (168 Hours) | REACH Unaffected | 3A991B2A | 8542.32.0041 | 1,000 | 200 MHz | Volatile | 18Mbit | 450 ps | SRAM | 1M x 18 | HSTL | - | |||
|
MT40A4G4DVN-068H:E | - | |
8206 | 0.00000000 | Micron Technology Inc. | - | Tray | Obsolete | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | MT40A4G4 | SDRAM - DDR4 | 1.14V ~ 1.26V | 78-FBGA (7.5x11) | download | ROHS3 Compliant | 3 (168 Hours) | 557-MT40A4G4DVN-068H:E | OBSOLETE | 210 | 1.467 GHz | Volatile | 16Gbit | 27 ns | DRAM | 4G x 4 | Parallel | - | |||
|
MT40A4G4DVN-075H:E | - | |
8926 | 0.00000000 | Micron Technology Inc. | - | Tray | Obsolete | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | MT40A4G4 | SDRAM - DDR4 | 1.14V ~ 1.26V | 78-FBGA (7.5x11) | download | ROHS3 Compliant | 3 (168 Hours) | 557-MT40A4G4DVN-075H:E | OBSOLETE | 210 | 1.33 GHz | Volatile | 16Gbit | 27 ns | DRAM | 4G x 4 | Parallel | - | |||
|
MT58L128L32D1F-6 | 8.2200 | |
1583 | 0.00000000 | Micron Technology Inc. | SYNCBURST™ | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | MT58L128L32 | SRAM | 3.135V ~ 3.6V | 165-FBGA (13x15) | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | 3A991B2A | 8542.32.0041 | 1 | 166 MHz | Volatile | 4Mbit | 3.5 ns | SRAM | 128K x 32 | Parallel | - | ||
|
MT54V1MH18EF-7.5 | - | |
4730 | 0.00000000 | Micron Technology Inc. | QDR® | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | SRAM - Synchronous | 2.4V ~ 2.6V | 165-FBGA (13x15) | download | 3A991B2A | 8542.32.0041 | 1 | 133 MHz | Volatile | 18Mbit | 3 ns | SRAM | 1M x 18 | HSTL | - | ||||||
 |
MT57V512H36AF-7.5 | 17.3600 | |
41 | 0.00000000 | Micron Technology Inc. | - | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | SRAM - Synchronous | 2.4V ~ 2.6V | 165-FBGA (13x15) | download | 3A991B2A | 8542.32.0041 | 1 | 133 MHz | Volatile | 18Mbit | 3.6 ns | SRAM | 512K x 36 | HSTL | - | ||||||
 |
MT55L512L18FF-11 | 8.9300 | |
1825 | 0.00000000 | Micron Technology Inc. | ZBT® | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | MT55L512L | SRAM - Synchronous, ZBT | 3.135V ~ 3.465V | 165-FBGA (13x15) | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | 3A991B2A | 8542.32.0041 | 1 | 90 MHz | Volatile | 8Mbit | 8.5 ns | SRAM | 512K x 18 | Parallel | - | ||
 |
MT29F8G08ADAFAWP-AIT:F | 11.6600 | |
999 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | MT29F8G08 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 48-TSOP I | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B1A | 8542.32.0071 | 1 | Non-Volatile | 8Gbit | FLASH | 1G x 8 | Parallel | - | ||||
|
MT29F8G08ADAFAWP-AAT:F | 12.8500 | |
241 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | MT29F8G08 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 48-TSOP I | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B1A | 8542.32.0071 | 1 | Non-Volatile | 8Gbit | FLASH | 1G x 8 | Parallel | - | ||||
|
MT29F4G08ABAFAWP-AAT:F | 5.3900 | |
564 | 0.00000000 | Micron Technology Inc. | - | Tray | Active | -40°C ~ 105°C (TC) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | MT29F4G08 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 48-TSOP I | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29F4G08ABAFAWP-AAT:F | 3A991B1A | 8542.32.0071 | 1 | Non-Volatile | 4Gbit | FLASH | 512M x 8 | Parallel | - | |||
|
MT53D4G16D8AL-062 WT:E TR | - | |
3057 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -30°C ~ 85°C (TC) | MT53D4G16 | SDRAM - Mobile LPDDR4 | 1.1V | - | ROHS3 Compliant | 3 (168 Hours) | MT53D4G16D8AL-062WT:ETR | OBSOLETE | 2,000 | 1.6 GHz | Volatile | 64Gbit | DRAM | 4G x 16 | - | - |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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