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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK7A90E,S4X | 1.6900 |  |
100 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVIII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK7A90 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 7A (Ta) | 10V | 2Ohm @ 3.5A, 10V | 4V @ 700µA | 32 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 45W (Tc) | |||||||||||||||
 |
TPN1110ENH,L1Q | 1.6800 | |
1291 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN1110 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 200 V | 7.2A (Ta) | 10V | 114mOhm @ 3.6A, 10V | 4V @ 200µA | 7 nC @ 10 V | ±20V | 600 pF @ 100 V | - | 700mW (Ta), 39W (Tc) | |||||||||||||||
 |
SSM6K217FE,LF | 0.3700 | |
37 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6K217 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | N-Channel | 40 V | 1.8A (Ta) | 1.8V, 8V | 195mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1 nC @ 4.2 V | ±12V | 130 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||
|
TPH1110FNH,L1Q | 1.8400 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH1110 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 250 V | 10A (Ta) | 10V | 112mOhm @ 5A, 10V | 4V @ 300µA | 11 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 1.6W (Ta), 57W (Tc) | |||||||||||||||
 |
TPCF8402(TE85L,F,M | - | |
3491 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCF8402 | MOSFET (Metal Oxide) | 330mW | VS-8 (2.9x1.5) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | N and P-Channel | 30V | 4A, 3.2A | 50mOhm @ 2A, 10V | 2V @ 1mA | 10nC @ 10V | 470pF @ 10V | Logic Level Gate | ||||||||||||||||||
 |
TK6Q65W,S1Q | 1.4000 | |
8899 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TK6Q65 | MOSFET (Metal Oxide) | I-Pak | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 75 | N-Channel | 650 V | 5.8A (Ta) | 10V | 1.05Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 60W (Tc) | |||||||||||||||
 |
TPCC8065-H,LQ(S | - | |
2198 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCC8065 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 13A (Ta) | 4.5V, 10V | 11.4mOhm @ 6.5A, 10V | 2.3V @ 200µA | 20 nC @ 10 V | ±20V | 1350 pF @ 10 V | - | 700mW (Ta), 18W (Tc) | |||||||||||||||
 |
RN2117(TE85L,F) | 0.3900 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2117 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 200 MHz | 10 kOhms | 4.7 kOhms | |||||||||||||||||||
 |
SSM6L12TU,LF | 0.5100 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6L12 | MOSFET (Metal Oxide) | 500mW | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 30V, 20V | 500mA (Ta) | 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V | 1.1V @ 100µA | - | 245pF @ 10V, 218pF @ 10V | - | |||||||||||||||||
 |
RN1903,LXHF(CT | 0.3600 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1903 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz | 22kOhms | 22kOhms | |||||||||||||||||||
 |
2SC4883A | - | |
7097 | 0.00000000 | Toshiba Semiconductor and Storage | * | Tube | Active | 2SC4883 | - | RoHS Compliant | 1 (Unlimited) | 2SC4883ATS | 0000.00.0000 | 50 | |||||||||||||||||||||||||||||||
 |
2SA1162S-GR,LF(D | - | |
6832 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1162 | 150 mW | S-Mini | download | 1 (Unlimited) | 2SA1162S-GRLF(D | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | PNP | 300mV @ 10mA, 100mA | 70 @ 2mA, 6V | 80MHz | |||||||||||||||||||
|
RN1903FE,LF(CT | 0.2500 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN1903 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 4,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz | 22kOhms | 22kOhms | ||||||||||||||||||
 |
2SA1020-O(F,M) | - | |
4526 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||
 |
TK4A60D(STA4,Q,M) | - | |
6275 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK4A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 35W (Tc) | |||||||||||||||
|
2SC2714-Y(TE85L,F) | 0.4400 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SC2714 | 100mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 23dB | 30V | 20mA | NPN | 100 @ 1mA, 6V | 550MHz | 2.5dB @ 100MHz | |||||||||||||||||||
 |
TP86R203NL,LQ | 0.9000 | |
19 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TP86R203 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 19A (Ta) | 4.5V, 10V | 6.2mOhm @ 9A, 10V | 2.3V @ 200µA | 17 nC @ 10 V | ±20V | 1400 pF @ 15 V | - | 1W (Tc) | |||||||||||||||
 |
TK45P03M1,RQ(S | - | |
5821 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK45P03 | MOSFET (Metal Oxide) | DPAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 30 V | 45A (Ta) | 4.5V, 10V | 9.7mOhm @ 22.5A, 10V | 2.3V @ 200µA | 25 nC @ 10 V | ±20V | 1500 pF @ 10 V | - | - | |||||||||||||||
 |
RN1306,LXHF | 0.3900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1306 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200 MHz | 4.7 kOhms | 47 kOhms | |||||||||||||||||||
|
TK8A60W,S4VX | 2.6600 | |
4513 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 8A (Ta) | 10V | 500mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5 nC @ 10 V | ±30V | 570 pF @ 300 V | - | 30W (Tc) | |||||||||||||||
 |
RN2702,LF | 0.3000 | |
7882 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | RN2702 | 200mW | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz | 10kOhms | 10kOhms | ||||||||||||||||||
 |
TW048N65C,S1F | 16.3200 | |
17 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 40A (Tc) | 18V | 65mOhm @ 20A, 18V | 5V @ 1.6mA | 41 nC @ 18 V | +25V, -10V | 1362 pF @ 400 V | - | 132W (Tc) | ||||||||||||||||
 |
SSM3K345R,LF | 0.4300 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3K345 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 20 V | 4A (Ta) | 1.5V, 4.5V | 33mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6 nC @ 4.5 V | ±8V | 410 pF @ 10 V | - | 1W (Ta) | |||||||||||||||
|
TPCA8028-H(TE12LQM | - | |
9696 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV-H | Cut Tape (CT) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8028 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 50A (Ta) | 4.5V, 10V | 2.8mOhm @ 25A, 10V | 2.3V @ 1mA | 88 nC @ 10 V | ±20V | 7800 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | |||||||||||||||
|
RN4902,LF(CT | 0.2800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4902 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz | 10kOhms | 10kOhms | ||||||||||||||||||
 |
SSM6K518NU,LF | 0.4100 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-WDFN Exposed Pad | SSM6K518 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 33mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6 nC @ 4.5 V | ±8V | 410 pF @ 10 V | - | 1.25W (Ta) | |||||||||||||||
|
TK17A65W5,S5X | 3.1400 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK17A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 17.3A (Ta) | 10V | 230mOhm @ 8.7A, 10V | 4.5V @ 900µA | 50 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 45W (Tc) | |||||||||||||||
|
2SC2705-O(TPE6,F) | - | |
4015 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Box (TB) | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2705 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 150 V | 50 mA | 100nA (ICBO) | NPN | 1V @ 1mA, 10mA | 80 @ 10mA, 5V | 200MHz | ||||||||||||||||||||
 |
2SK3700(F) | 2.5200 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SK3700 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 5A (Ta) | 2.5Ohm @ 3A, 10V | 4V @ 1mA | 28 nC @ 10 V | 1150 pF @ 25 V | - | 150W (Tc) | |||||||||||||||||
|
2SC2383-O(T6OMI,FM | - | |
4250 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2383 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 160 V | 1 A | 1µA (ICBO) | NPN | 1.5V @ 50mA, 500mA | 60 @ 200mA, 5V | 100MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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