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FETs, MOSFETs(55612)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FQP44N08 | - |  |
6825 | 0.00000000 | onsemi | QFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | FQP4 | MOSFET (Metal Oxide) | TO-220-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 80 V | 44A (Tc) | 10V | 34mOhm @ 22A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±25V | 1430 pF @ 25 V | - | 127W (Tc) | |||||||||||||
 |
IRL3715ZCLPBF | - | |
6029 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262 | download | 1 (Unlimited) | REACH Unaffected | *IRL3715ZCLPBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 20 V | 50A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11 nC @ 4.5 V | ±20V | 870 pF @ 10 V | - | 45W (Tc) | |||||||||||||
 |
IXTP110N12T2 | - | |
5753 | 0.00000000 | IXYS | TrenchT2™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IXTP110 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 120 V | 110A (Tc) | 10V | 14mOhm @ 55A, 10V | 4.5V @ 250µA | 120 nC @ 10 V | ±20V | 6570 pF @ 25 V | - | 517W (Tc) | ||||||||||||
 |
PD57060STR-E | - | |
8310 | 0.00000000 | STMicroelectronics | - | Tape & Reel (TR) | Obsolete | 65 V | PowerSO-10 Exposed Bottom Pad | PD57060 | 945MHz | LDMOS | PowerSO-10RF (Straight Lead) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 600 | 7A | 100 mA | 60W | 14.3dB | - | 28 V | |||||||||||||||||
 |
SQ9407EY-T1_GE3 | 1.1800 | |
8 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | SQ9407 | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 60 V | 4.6A (Tc) | 4.5V, 10V | 85mOhm @ 3.5A, 10V | 2.5V @ 250µA | 40 nC @ 10 V | ±20V | 1140 pF @ 30 V | - | 3.75W (Tc) | |||||||||||||
 |
IPP040N06N3GHKSA1 | - | |
1400 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IPP040N | MOSFET (Metal Oxide) | PG-TO220-3 | download | 1 (Unlimited) | REACH Unaffected | SP000398032 | EAR99 | 8541.29.0095 | 500 | N-Channel | 60 V | 90A (Tc) | 10V | 4mOhm @ 90A, 10V | 4V @ 90µA | 98 nC @ 10 V | ±20V | 11000 pF @ 30 V | - | 188W (Tc) | ||||||||||||
 |
RV5C040APTCR1 | 0.8900 | |
3 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-PowerWFDFN | RV5C040 | MOSFET (Metal Oxide) | DFN1616-8S | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 4A (Ta) | 1.5V, 4.5V | 85mOhm @ 4A, 4.5V | 1V @ 1mA | 8.5 nC @ 4.5 V | -8V, 0V | 2000 pF @ 10 V | - | 700mW (Ta) | ||||||||||||
 |
IXFP8N65X2M | - | |
4338 | 0.00000000 | IXYS | HiPerFET™, Ultra X2 | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | IXFP8N65 | MOSFET (Metal Oxide) | TO-220 Isolated Tab | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 8A (Tc) | 10V | 450mOhm @ 4A, 10V | 5V @ 250µA | 11 nC @ 10 V | ±30V | 790 pF @ 25 V | - | 150W (Tc) | ||||||||||||
|
IRL1404ZLPBF | - | |
1158 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262 | download | 1 (Unlimited) | REACH Unaffected | SP001552544 | EAR99 | 8541.29.0095 | 50 | N-Channel | 40 V | 120A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110 nC @ 5 V | ±16V | 5080 pF @ 25 V | - | 230W (Tc) | |||||||||||||
 |
IPD65R650CEAUMA1 | 1.1000 | |
2 | 0.00000000 | Infineon Technologies | CoolMOS™ CE | Tape & Reel (TR) | Active | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD65R650 | MOSFET (Metal Oxide) | PG-TO252-3 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 7A (Tc) | 10V | 650mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 86W (Tc) | ||||||||||||
 |
G60N06T | 0.8000 | |
82 | 0.00000000 | Goford Semiconductor | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | RoHS Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0000 | 50 | N-Channel | 60 V | 50A (Tc) | 4.5V, 10V | 17mOhm @ 5A, 10V | 2V @ 250µA | 50 nC @ 10 V | ±20V | 2050 pF @ 30 V | - | 85W (Tc) | |||||||||||||
 |
EPC2066 | 6.2500 | |
7 | 0.00000000 | EPC | eGaN® | Tape & Reel (TR) | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | EPC20 | GaNFET (Gallium Nitride) | Die | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0040 | 1,000 | N-Channel | 40 V | 90A (Ta) | 5V | 1.1mOhm @ 50A, 5V | 2.5V @ 28mA | 33 nC @ 5 V | +6V, -4V | 4523 pF @ 20 V | - | - | ||||||||||||
|
IRLR120NTRLPBF | 1.2400 | |
3 | 0.00000000 | Infineon Technologies | HEXFET® | Tape & Reel (TR) | Not For New Designs | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IRLR120 | MOSFET (Metal Oxide) | D-Pak | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 100 V | 10A (Tc) | 4V, 10V | 185mOhm @ 6A, 10V | 2V @ 250µA | 20 nC @ 5 V | ±16V | 440 pF @ 25 V | - | 48W (Tc) | ||||||||||||
|
IRLC8259ED | - | |
1809 | 0.00000000 | Infineon Technologies | - | Bulk | Obsolete | download | 1 (Unlimited) | REACH Unaffected | SP001573876 | OBSOLETE | 0000.00.0000 | 1 | - | ||||||||||||||||||||||||||||
|
DMTH4014LDVWQ-7 | 0.2771 | |
2219 | 0.00000000 | Diodes Incorporated | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | DMTH4014 | MOSFET (Metal Oxide) | 1.16W (Ta) | PowerDI3333-8 (Type UXD) | download | REACH Unaffected | 31-DMTH4014LDVWQ-7TR | EAR99 | 8541.29.0095 | 2,000 | 2 N-Channel (Dual) | 40V | 10.2A (Ta), 27.5A (Tc) | 15mOhm @ 20A, 10V | 3V @ 250µA | 11.2nC @ 10V | 750pF @ 20V | - | |||||||||||||||
 |
SIHW61N65EF-GE3 | 9.2873 | |
9228 | 0.00000000 | Vishay Siliconix | E | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SIHW61 | MOSFET (Metal Oxide) | TO-247AD | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 480 | N-Channel | 650 V | 64A (Tc) | 10V | 47mOhm @ 30.5A, 10V | 4V @ 250µA | 371 nC @ 10 V | ±30V | 7407 pF @ 100 V | - | 520W (Tc) | |||||||||||||
 |
SI7121DN-T1-GE3 | 1.3200 | |
3 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | SI7121 | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 16A (Tc) | 4.5V, 10V | 18mOhm @ 10A, 10V | 3V @ 250µA | 65 nC @ 10 V | ±25V | 1960 pF @ 15 V | - | 3.7W (Ta), 52W (Tc) | |||||||||||||
 |
SI7386DP-T1-E3 | 1.6200 | |
2 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SI7386 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 12A (Ta) | 4.5V, 10V | 7mOhm @ 19A, 10V | 2.5V @ 250µA | 18 nC @ 4.5 V | ±20V | - | 1.8W (Ta) | ||||||||||||||
 |
NE3512S02-T1D-A | 0.6500 | |
16 | 0.00000000 | Renesas Electronics America Inc | - | Bulk | Obsolete | 4 V | 4-SMD, Flat Leads | 12GHz | HFET | S02 | download | ROHS3 Compliant | EAR99 | 8541.21.0075 | 10,000 | 70mA | 10 mA | - | 13.5dB | 0.35dB | 2 V | ||||||||||||||||||||
 |
TK8R2A06PL,S4X | 1.0200 | |
1381 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tube | Active | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8R2A06 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 50A (Tc) | 4.5V, 10V | 11.4mOhm @ 8A, 4.5V | 2.5V @ 300µA | 28.4 nC @ 10 V | ±20V | 1990 pF @ 25 V | - | 36W (Tc) | |||||||||||||
 |
STL8P2UH7 | - | |
5357 | 0.00000000 | STMicroelectronics | DeepGATE™, STripFET™ VII | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 6-PowerWDFN | STL8 | MOSFET (Metal Oxide) | PowerFlat™ (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 8A (Tc) | 1.5V, 4.5V | 22.5mOhm @ 4A, 4.5V | 1V @ 250µA | 22 nC @ 4.5 V | ±8V | 2390 pF @ 16 V | - | 2.4W (Tc) | ||||||||||||
 |
TPC8129,LQ(S | 0.5600 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TPC8129 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 30 V | 9A (Ta) | 4.5V, 10V | 22mOhm @ 4.5A, 10V | 2V @ 200µA | 39 nC @ 10 V | +20V, -25V | 1650 pF @ 10 V | - | 1W (Ta) | |||||||||||||
 |
SH8KE6TB1 | 1.7200 | |
1 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | SH8KE6 | MOSFET (Metal Oxide) | 1.4W (Ta) | 8-SOP | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | 2 N-Channel (Dual) | 100V | 4.5A (Ta) | 58mOhm @ 4.5A, 10V | 2.5V @ 1mA | 6.7nC @ 10V | 305pF @ 50V | - | ||||||||||||||
 |
SI8416DB-T2-E1 | 0.7100 | |
4 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA | SI8416 | MOSFET (Metal Oxide) | 6-Micro Foot™ (1.5x1) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 8 V | 16A (Tc) | 1.2V, 4.5V | 23mOhm @ 1.5A, 4.5V | 800mV @ 250µA | 26 nC @ 4.5 V | ±5V | 1470 pF @ 4 V | - | 2.77W (Ta), 13W (Tc) | ||||||||||||
 |
IRFU2905ZPBF | - | |
4622 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | IPAK (TO-251AA) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 75 | N-Channel | 55 V | 42A (Tc) | 10V | 14.5mOhm @ 36A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 1380 pF @ 25 V | - | 110W (Tc) | ||||||||||||||
 |
TPN8R903NL,LQ | 0.7400 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN8R903 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 20A (Tc) | 4.5V, 10V | 8.9mOhm @ 10A, 10V | 2.3V @ 100µA | 9.8 nC @ 4.5 V | ±20V | 820 pF @ 15 V | - | 700mW (Ta), 22W (Tc) | |||||||||||||
 |
BUK98150-55A/CU135 | - | |
4703 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | download | EAR99 | 8541.29.0095 | 730 | ||||||||||||||||||||||||||||||||
 |
IXTT440N04T4HV | 12.0600 | |
60 | 0.00000000 | IXYS | Trench | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | IXTT440 | MOSFET (Metal Oxide) | TO-268HV (IXTT) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 40 V | 440A (Tc) | 10V | 1.25mOhm @ 100A, 10V | 4V @ 250µA | 480 nC @ 10 V | ±15V | 26000 pF @ 25 V | - | 940W (Tc) | ||||||||||||
 |
SIHP12N60E-E3 | 2.6900 | |
3456 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | SIHP12 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | SIHP12N60EE3 | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | ||||||||||||
 |
GSFU9006 | 3.4500 | |
1 | 0.00000000 | Good-Ark Semiconductor | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 4786-GSFU9006 | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 900 V | 6A (Tj) | 10V | 750mOhm @ 3A, 10V | 3.9V @ 250µA | 18.4 nC @ 10 V | ±30V | 1250 pF @ 50 V | - | 32W (Tj) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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