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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1SS309(TE85L,F) | 0.4100 |  |
385 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74A, SOT-753 | 1SS309 | Standard | SMV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 4 Common Cathode | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | ||||||||||||||||||||||||||||||||
 |
TK31J60W,S1VQ | 9.3800 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK31J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | ||||||||||||||||||||||||||||
 |
SSM6N39TU,LF | 0.4900 | |
7160 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6N39 | MOSFET (Metal Oxide) | 500mW | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 1.6A (Ta) | 119mOhm @ 1A, 4V | 1V @ 1mA | 7.5nC @ 4V | 260pF @ 10V | - | ||||||||||||||||||||||||||||||
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2SA1930,LBS2DIAQ(J | - | |
1334 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1930 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 180 V | 2 A | 5µA (ICBO) | PNP | 1V @ 100mA, 1A | 100 @ 100mA, 5V | 200MHz | |||||||||||||||||||||||||||||||||
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CUS551V30,H3F | 0.2700 | |
13 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-76, SOD-323 | CUS551 | Schottky | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 470 mV @ 500 mA | 100 µA @ 20 V | 125°C (Max) | 500mA | - | |||||||||||||||||||||||||||||||||
|
2SA1837(PAIO,F,M) | - | |
8587 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1837 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | PNP | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 70MHz | |||||||||||||||||||||||||||||||||
 |
RN1305,LF | 0.2700 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1305 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 2.2 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||
 |
2SD1221-Y(Q) | - | |
3084 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SD1221 | 1 W | PW-MOLD | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 200 | 60 V | 3 A | 100µA (ICBO) | NPN | 1V @ 300mA, 3A | 100 @ 500mA, 5V | 3MHz | |||||||||||||||||||||||||||||||||
|
2SC4116-Y,LF | 0.1800 | |
25 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SC4116 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||||||||
 |
CUS15I30A(TE85L,QM | - | |
3931 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-76, SOD-323 | CUS15I30 | Schottky | US-FLAT (1.25x2.5) | download | RoHS Compliant | CUS15I30A(TE85LQM | EAR99 | 8541.10.0080 | 4,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 460 mV @ 1.5 A | 60 µA @ 30 V | 150°C (Max) | 1.5A | 50pF @ 10V, 1MHz | |||||||||||||||||||||||||||||||||
|
CLS02(TE16L,HIT,Q) | - | |
7549 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS02 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 550 mV @ 10 A | 1 mA @ 40 V | -40°C ~ 125°C | 10A | 420pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||
 |
CRZ10(TE85L,Q) | - | |
1889 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | ±10% | -40°C ~ 150°C | Surface Mount | SOD-123F | CRZ10 | 700 mW | S-FLAT (1.6x3.5) | download | 1 (Unlimited) | CRZ10TR-NDR | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 6 V | 10 V | 30 Ohms | ||||||||||||||||||||||||||||||||||
 |
MT3S20P(TE12L,F) | - | |
2879 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-243AA | MT3S20 | 1.8W | PW-MINI | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | 16.5dB | 12V | 80mA | NPN | 100 @ 50mA, 5V | 7GHz | 1.45dB @ 1GHz | ||||||||||||||||||||||||||||||||
 |
SSM3J15CT(TPL3) | - | |
1272 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | SSM3J15 | MOSFET (Metal Oxide) | CST3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | P-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | - | ±20V | 9.1 pF @ 3 V | - | 100mW (Ta) | |||||||||||||||||||||||||||||
 |
RN2961(TE85L,F) | 0.4800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2961 | 200mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 200MHz | 4.7kOhms | 4.7kOhms | |||||||||||||||||||||||||||||||
 |
RN1408,LF | 0.1900 | |
3234 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1408 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 22 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||
 |
TK31N60W,S1VF | 9.2900 | |
1508 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK31N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | ||||||||||||||||||||||||||||
|
2SA1298-Y,LF | 0.4200 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1298 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 25 V | 800 mA | 100nA (ICBO) | PNP | 400mV @ 20mA, 500mA | 160 @ 100mA, 1V | 120MHz | ||||||||||||||||||||||||||||||||
|
CUS06(TE85L,Q,M) | - | |
6944 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-76, SOD-323 | CUS06 | Schottky | US-FLAT (1.25x2.5) | download | RoHS Compliant | CUS06(TE85LQM) | EAR99 | 8541.10.0080 | 4,000 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | 450 mV @ 700 mA | 30 µA @ 20 V | -40°C ~ 150°C | 1A | 40pF @ 10V, 1MHz | |||||||||||||||||||||||||||||||||
 |
HN1D01FU,LF(T | 0.4600 | |
137 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN1D01 | Standard | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 2 Pair Common Anode | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | ||||||||||||||||||||||||||||||||
 |
RN2903FE(TE85L,F) | 0.3400 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2903 | 100mW | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz | 22kOhms | 22kOhms | |||||||||||||||||||||||||||||||
 |
1SS352,H3F | 0.1800 | |
236 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-76A | 1SS352 | Standard | SC-76-2 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 80 V | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | 100mA | 3pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||
|
CMH05(TE12L,Q,M) | - | |
7589 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOD-128 | CMH05 | Standard | M-FLAT (2.4x3.8) | download | RoHS Compliant | CMH05(TE12LQM) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | 1.3 V @ 1 A | 100 ns | 10 µA @ 400 V | -40°C ~ 150°C | 1A | - | ||||||||||||||||||||||||||||||||
|
CMS04(TE12L) | - | |
1186 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Obsolete | Surface Mount | SOD-128 | CMS04 | Schottky | M-FLAT (2.4x3.8) | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 370 mV @ 5 A | 8 mA @ 30 V | -40°C ~ 125°C | 5A | - | |||||||||||||||||||||||||||||||||
|
1SS322(TE85L,F) | 0.2800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | 1SS322 | Schottky | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 40 V | 600 mV @ 100 mA | 5 µA @ 40 V | 125°C (Max) | 100mA | 18pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||
 |
2SA1680,T6SCMDF(J | - | |
3084 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1680 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 120 @ 100mA, 2V | 100MHz | |||||||||||||||||||||||||||||||||
|
RN2417,LXHF | 0.3400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2417 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 200 MHz | 10 kOhms | 4.7 kOhms | ||||||||||||||||||||||||||||||||
|
TRS12N65FB,S1F(S | - | |
3099 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-247-3 | TRS12N65 | SiC (Silicon Carbide) Schottky | TO-247 | - | RoHS Compliant | 1 (Unlimited) | TRS12N65FBS1F(S | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 6A (DC) | 1.7 V @ 6 A | 0 ns | 90 µA @ 650 V | 175°C (Max) | |||||||||||||||||||||||||||||||
 |
RN1706JE(TE85L,F) | - | |
8712 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Active | Surface Mount | SOT-553 | RN1706 | 100mW | ESV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 4.7kOhms | 47kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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