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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RN1105MFV,L3F(CT | 0.1800 |  |
38 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1105 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 2.2 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||||
 |
RN1118(T5L,F,T) | - | |
3198 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-75, SOT-416 | RN1118 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 47 kOhms | 10 kOhms | ||||||||||||||||||||||||||||||||
 |
2SA1586-Y,LF | 0.1800 | |
53 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SA1586 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | PNP | 300mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||||||||
 |
TK14C65W5,S1Q | - | |
2691 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TK14C65 | MOSFET (Metal Oxide) | I2PAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 130W (Tc) | ||||||||||||||||||||||||||||
 |
TK25V60X5,LQ | 5.0300 | |
8257 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 25A (Ta) | 10V | 150mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | |||||||||||||||||||||||||||||
 |
2SA1313-Y,LF | 0.3400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1313 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 500 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 100mA | 120 @ 100mA, 1V | 200MHz | ||||||||||||||||||||||||||||||||
 |
TPCP8005-H(TE85L,F | - | |
2162 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCP8005 | MOSFET (Metal Oxide) | PS-8 (2.9x2.4) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 11A (Ta) | 4.5V, 10V | 12.9mOhm @ 5.5A, 10V | 2.5V @ 1mA | 20 nC @ 10 V | ±20V | 2150 pF @ 10 V | - | 840mW (Ta) | |||||||||||||||||||||||||||||
|
RN1107,LF(CT | 0.2000 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1107 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 10 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||
|
1SS302A,LF | 0.2200 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | 1SS302 | Standard | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Series Connection | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | -55°C ~ 150°C | ||||||||||||||||||||||||||||||||
|
MT3S16U(TE85L,F) | 0.2500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | MT3S16 | 100mW | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 4.5dBi | 5V | 60mA | NPN | 80 @ 5mA, 1V | 4GHz | 2.4dB @ 1GHz | ||||||||||||||||||||||||||||||||
|
SSM3K35AMFV,L3F | 0.2300 | |
239 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-723 | SSM3K35 | MOSFET (Metal Oxide) | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | N-Channel | 20 V | 250mA (Ta) | 1.2V, 4.5V | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34 nC @ 4.5 V | ±10V | 36 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||||||||||||||
 |
TK4R4P06PL,RQ | 1.4500 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK4R4P06 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 60 V | 58A (Tc) | 4.5V, 10V | 4.4mOhm @ 29A, 10V | 2.5V @ 500µA | 48.2 nC @ 10 V | ±20V | 3280 pF @ 30 V | - | 87W (Tc) | ||||||||||||||||||||||||||||
 |
CBS05F30,L3F | 0.3900 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, No Lead | CBS05F30 | Schottky | CST2B | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 50 µA @ 30 V | 125°C (Max) | 500mA | 118pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||
 |
CMG03(TE12L,Q,M) | - | |
2511 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOD-128 | CMG03 | Standard | M-FLAT (2.4x3.8) | download | RoHS Compliant | 1 (Unlimited) | CMG03(TE12LQM) | EAR99 | 8541.10.0080 | 3,000 | Standard Recovery >500ns, > 200mA (Io) | 600 V | 1.1 V @ 2 A | 10 µA @ 600 V | -40°C ~ 150°C | 2A | - | ||||||||||||||||||||||||||||||||
|
CMZ16(TE12L,Q,M) | 0.5400 | |
4384 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | CMZ16 | 2 W | M-FLAT (2.4x3.8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1.2 V @ 200 mA | 10 µA @ 11 V | 16 V | 30 Ohms | ||||||||||||||||||||||||||||||||||
|
CRZ39(TE85L,Q,M) | 0.4900 | |
7342 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | CRZ39 | 700 mW | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 31.2 V | 39 V | 35 Ohms | ||||||||||||||||||||||||||||||||||
|
CRZ47(TE85L,Q,M) | 0.4900 | |
4033 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | CRZ47 | 700 mW | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 37.6 V | 47 V | 65 Ohms | ||||||||||||||||||||||||||||||||||
 |
TRS12A65F,S1Q | 5.4900 | |
28 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 Full Pack | TRS12A65 | SiC (Silicon Carbide) Schottky | TO-220F-2L | - | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 12 A | 0 ns | 60 µA @ 650 V | 175°C (Max) | 12A | 44pF @ 650V, 1MHz | ||||||||||||||||||||||||||||||||||
 |
XPN7R104NC,L1XHQ | 1.2500 | |
9396 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | XPN7R104 | MOSFET (Metal Oxide) | 8-TSON Advance-WF (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 20A (Ta) | 4.5V, 10V | 7.1mOhm @ 10A, 10V | 2.5V @ 200µA | 21 nC @ 10 V | ±20V | 1290 pF @ 10 V | - | 840mW (Ta), 65W (Tc) | |||||||||||||||||||||||||||||
 |
TJ20S04M3L,LXHQ | 0.9400 | |
34 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ20S04 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 20A (Ta) | 6V, 10V | 22.2mOhm @ 10A, 10V | 3V @ 1mA | 37 nC @ 10 V | +10V, -20V | 1850 pF @ 10 V | - | 41W (Tc) | |||||||||||||||||||||||||||||
 |
TK40S06N1L,LXHQ | 1.0700 | |
20 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK40S06 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 40A (Ta) | 4.5V, 10V | 18mOhm @ 20A, 10V | 2.5V @ 200µA | 26 nC @ 10 V | ±20V | 1650 pF @ 10 V | - | 88.2W (Tc) | |||||||||||||||||||||||||||||
|
TJ40S04M3L,LXHQ | 1.0800 | |
9632 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ40S04 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 40A (Ta) | 6V, 10V | 9.1mOhm @ 20A, 10V | 3V @ 1mA | 83 nC @ 10 V | +10V, -20V | 4140 pF @ 10 V | - | 68W (Tc) | |||||||||||||||||||||||||||||
|
TJ60S06M3L,LXHQ | 1.6500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ60S06 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 60A (Ta) | 6V, 10V | 11.2mOhm @ 30A, 10V | 3V @ 1mA | 156 nC @ 10 V | +10V, -20V | 7760 pF @ 10 V | - | 100W (Tc) | |||||||||||||||||||||||||||||
 |
SSM6N17FU(TE85L,F) | 0.4900 | |
14 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N17 | MOSFET (Metal Oxide) | 200mW (Ta) | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 50V | 100mA (Ta) | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | - | 7pF @ 3V | - | ||||||||||||||||||||||||||||||
 |
SSM3K35CT,L3F | 0.3200 | |
13 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-101, SOT-883 | SSM3K35 | MOSFET (Metal Oxide) | CST3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 20 V | 180mA (Ta) | 1.2V, 4V | 3Ohm @ 50mA, 4V | 1V @ 1mA | ±10V | 9.5 pF @ 3 V | - | 100mW (Ta) | |||||||||||||||||||||||||||||
 |
TK4K1A60F,S4X | 0.8300 | |
8560 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK4K1A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 2A (Ta) | 10V | 4.1Ohm @ 1A, 10V | 4V @ 190µA | 8 nC @ 10 V | ±30V | 270 pF @ 300 V | - | 30W (Tc) | ||||||||||||||||||||||||||||
 |
TK22A65X,S5X | 3.8400 | |
188 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK22A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 22A (Ta) | 10V | 150mOhm @ 11A, 10V | 3.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 45W (Tc) | ||||||||||||||||||||||||||||
|
TK380A65Y,S4X | 1.8300 | |
95 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK380A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W (Tc) | ||||||||||||||||||||||||||||
 |
TPN5R203PL,LQ | 0.6400 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN5R203 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 38A (Tc) | 4.5V, 10V | 5.2mOhm @ 19A, 10V | 2.1V @ 200µA | 22 nC @ 10 V | ±20V | 1975 pF @ 15 V | - | 610mW (Ta), 61W (Tc) | |||||||||||||||||||||||||||||
 |
TK28N65W5,S1F | 6.6700 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-247-3 | TK28N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 27.6A (Ta) | 10V | 130mOhm @ 13.8A, 10V | 4.5V @ 1.6mA | 90 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) |
2000+
Daily average RFQ Volume
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Standard Product Unit
2800+
Worldwide Manufacturers
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